InN nanostructures with surface electron accumulation as an alternate for low loss plasmonic materials in the UV visible region

摘要

Recently, heavily doped semiconductors are emerging as an alternate for lowloss plasmonic materials; however, surface plasmon resonance of these materialsin the visible region is difficult to achieve. InN, belonging to the group IIInitrides, possesses the unique property such as surface electron accumulationnear the surface region. In this report, for the first time, we demonstratedthe surface plasmon properties of InN nanoparticles, as a result of surfaceelectron accumulation, using the real space mapping of the surface plasmonintensity. The surface electron accumulation is confirmed by the valence bandphotoemission, Raman and photoluminescence spectroscopic studies. The variationin the carrier density in bulk and surface region was confirmed by UV-visibleabsorption and UV photoelectron spectroscopy, respectively. The surface plasmonprofiles were tuned with the variation of the sheet carrier density ofaccumulated electrons on surface, which were readily varied using the growthparameters such as the growth temperature. The localized surface plasmonresonance and the propagating surface plasmon polaritons are observed in the UVto visible region (200 to 400 nm), indicating InN as a promising alternate forthe low loss plasmonic material in the visible region.